Semiconductor device package manufacturing method and semiconductor device package manufactured by the method

ABSTRACT

A bump is formed on each element electrode of a semiconductor device, and a thermoplastic resin sheet is aligned in position with the semiconductor device. The sheet and the semiconductor device are subjected to hot pressing to melt the sheet, forming a thermoplastic resin portion that covers a portion other than the end surface of each bump of the semiconductor device. The thermoplastic resin portion obtained after the hot pressing is cut.

This is a Continuation Application of US. application Ser. No.10/031,000, filed Jan. 16, 2002, now U.S. Pat. No. 6,780,668 which isthe National Stage of International Application No. PCT/JP00/04699, Jul.13, 2000.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to a semiconductor device packagemanufacturing method capable of mounting a semiconductor device withhigh density, a small thickness, high productivity, and highreliability, an electronic component module manufacturing method, anoncontact IC card manufacturing method, utilizing the method, asemiconductor device package manufactured by the semiconductor devicepackage manufacturing method, a method for manufacturing a semiconductordevice-mounted component such as a semiconductor device package and anelectronic component module, a method for manufacturing a semiconductordevice-mounted finished-product utilizing the semiconductordevice-mounted component manufacturing method and a semiconductordevice-mounted finished-product manufactured by the semiconductordevice-mounted finished-product manufacturing method.

2. Description of Related Art

The conventional semiconductor device package will be described withreference to FIG. 18 through FIG. 21.

FIG. 20A, FIG. 20B, FIG. 20C, FIG. 20D and FIG. 21 show themanufacturing method process by process. FIG. 19 shows a process chart.

First of all, in step S101 of FIG. 19, dicing of a wafer is performed,and thereafter, a bump 104 is formed by the wire bonding method on eachelement electrode 105 of a semiconductor device 103 in step S102 asshown in FIG. 20A. The reference numeral 106 denotes a passivation filmfor protecting the active surface of the semiconductor device 103.

Next, in step S103, as shown in FIG. 20B, a conductive adhesive 116 isformed on the bump 104 by a transfer method. For the conductive adhesive116, an epoxy-based adhesive, which include particles of Ag, Cu, or thelike as a filler, is principally employed.

Next, in step S104, as shown in FIG. 20C, the semiconductor device 103is mounted so that the bumps 104 of the semiconductor device 103 areelectrically connected to the electrodes 117 of a circuit board 115formed of ceramic, glass epoxy, or the like, and the conductive adhesive116 is thermally hardened in step S105. The standard hardeningconditions of the conductive adhesive 116 are 140° C. for 20 minutes.

Next, in step S106, as shown in FIG. 20D, a space between thesemiconductor device 103 and the circuit board 115 is filled with anencapsulant 121 for securing reliability by a dispenser 122, andthermosetting is performed in step S107. The average conditions of thethermosetting are 140° C. for four hours.

Next, in step S108, as shown in FIG. 21, a solder paste 120 is printedon electrodes 118 formed on the side that belongs to the circuit board115 and are opposite from the mounting surface of the semiconductordevice 103, and thereafter, metallic particles 119 of Au, Cu, Ag, or thelike are mounted in step S109 and made to pass through a reflow furnacein step S110, obtaining a semiconductor device package as shown in FIG.18.

The semiconductor device package shown in FIG. 18 is thus completedthrough the processes of step S101 to step S110.

However, according to the above-mentioned conventional semiconductordevice package manufacturing method and structure, there has been theissue that the productivity is low because many processes are needed andmuch time is necessary for the hardening of the conductive adhesive 116and the encapsulant 121. Moreover, the circuit board 115 has a thicknessof about 0.5 mm, and a total thickness of the semiconductor packagebecomes about 1 mm including the thickness of the semiconductor device103. This structure has had difficulties in being reduced in thicknessand the issue that the package cannot be applied to a commodity, whichis restricted to a thickness of not greater than 0.76 mm as in, forexample, a noncontact IC card.

Accordingly, the object of the present invention is to solve theaforementioned issues and provide a thin type semiconductor devicepackage manufacturing method with high quality and high productivity, anelectronic component module manufacturing method, a noncontact IC cardmanufacturing method, utilizing the semiconductor device packagemanufacturing method, a semiconductor device package manufactured by thesemiconductor device package manufacturing method, a method formanufacturing a semiconductor device-mounted component such as asemiconductor device package and an electronic component module, amethod for manufacturing a semiconductor device-mounted finished-productutilizing the semiconductor device-mounted component manufacturingmethod and a semiconductor device-mounted finished-product manufacturedby the semiconductor device-mounted finished-product manufacturingmethod.

SUMMARY OF THE INVENTION

In order to achieve the aforementioned object, the present invention isconstructed as follows.

According to a first aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

forming bumps on element electrodes of a semiconductor device by a wirebonding method;

positioning the semiconductor device on a thermoplastic resin sheet;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for end surfaces of the bumps by melting thethermoplastic resin sheet through hot pressing of the thermoplasticresin sheet and the semiconductor device; and

cutting the thermoplastic resin portion after the hot pressing.

According to a second aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

forming by a wire bonding method a bump on an element electrode of asemiconductor device of an individual piece obtained by dicing asemiconductor wafer;

positioning one or a plurality of the semiconductor devices on athermoplastic resin sheet;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for an end surface of the bump by meltingthe thermoplastic resin sheet through hot pressing of the thermoplasticresin sheet and each individual piece of the semiconductor device; and

cutting the thermoplastic resin portion after the hot pressing.

According to a third aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

forming bumps on semiconductor device electrodes of a semiconductorwafer by a wire bonding method;

dicing the semiconductor wafer on which the bump is formed to divide thewafer into each individual piece of a semiconductor device;

positioning one or a plurality of the semiconductor devices on athermoplastic resin sheet;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for end surfaces of the bumps by melting thethermoplastic resin sheet through hot pressing of the thermoplasticresin sheet and each individual piece of the semiconductor device; and

cutting the thermoplastic resin portion after the hot pressing.

According to a fourth aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

forming bumps on element electrodes of a semiconductor wafer by a wirebonding method;

positioning a thermoplastic resin sheet on the semiconductor wafer;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for end surfaces of the bumps by melting thethermoplastic resin sheet through hot pressing of the semiconductorwafer and the thermoplastic resin sheet; and

dicing the semiconductor wafer and the thermoplastic resin portion,which have undergone the hot pressing.

According to a fifth aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

printing a circuit pattern with a conductive paste in a thermoplasticresin portion that is located on an end surface side where the bump isexposed and belongs to a semiconductor device package manufactured bythe semiconductor device package manufacturing method defined in thefirst or second or third aspect;

hardening the conductive paste with a metallic particle arranged in aspecified position of the circuit pattern;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for an end surface of the metallic particleby positioning the semiconductor device package obtained after thehardening of the conductive paste on the thermoplastic resin sheet andmelting the thermoplastic resin sheet through hot pressing; and

cutting the thermoplastic resin portion after the hot pressing.

According to a sixth aspect of the present invention, there is provideda semiconductor device package manufacturing method comprising:

printing a circuit pattern with a conductive paste on an electrodesurface side of a semiconductor device package manufactured by thesemiconductor device package manufacturing method defined in the fifthaspect;

hardening the conductive paste with a metallic particle arranged in aspecified position of the circuit pattern;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for an end surface of the metallic particleby positioning the semiconductor device package obtained after thehardening of the conductive paste on the thermoplastic resin sheet andmelting the thermoplastic resin sheet through hot pressing; and

repeating cutting of the thermoplastic resin portion after the hotpressing in specified times, thereby forming a multi-layer package.

According to a seventh aspect of the present invention, there isprovided a semiconductor device package manufacturing method comprising:

printing a circuit pattern with a conductive paste on an electrodesurface side of the semiconductor wafer before the dicing of thesemiconductor wafer and the thermoplastic resin portion, which haveundergone the hot pressing, according to the semiconductor devicepackage manufacturing method of the fourth aspect;

hardening the conductive paste with a metallic particle arranged in aspecified position of the circuit pattern;

forming a thermoplastic resin portion for covering a portion of thesemiconductor device except for an end surface of the metallic particleby aligning in position the semiconductor wafer obtained after thehardening of the conductive paste with the thermoplastic resin sheet andmelting the thermoplastic resin sheet through hot pressing; and

dicing the semiconductor wafer that has the metallic particle and hasundergone the hot pressing.

According to an eighth aspect of the present invention, there isprovided a semiconductor device package manufacturing method comprising:

printing a circuit pattern with a conductive paste on an electrodesurface side of the semiconductor wafer before the dicing of thesemiconductor wafer and the thermoplastic resin portion, which haveundergone the hot pressing, according to the semiconductor devicepackage manufacturing method of the fourth aspect;

hardening the conductive paste with a metallic particle arranged in aspecified position of the circuit pattern; and

obtaining a multi-layer structure by repeating in specified timesprocess of forming a thermoplastic resin portion for covering a portionof the semiconductor device except for an end surface of the metallicparticle by aligning in position the semiconductor wafer obtained afterthe hardening of the conductive paste with the thermoplastic resin sheetand melting the thermoplastic resin sheet through hot pressing, andthereafter dicing the semiconductor wafer that has the metallic particleand has undergone the hot pressing.

According to a ninth aspect of the present invention, there is provideda semiconductor device package manufacturing method as defined in anyone of the first through eighth aspects, wherein when the thermoplasticresin portion is formed, the thermoplastic resin sheet is melted andthereby covering the surface of the semiconductor device on which thebump is formed except for the end surface of the semiconductor device.

According to a tenth aspect of the present invention, there is providedan electronic component module manufacturing method comprising:

printing a circuit pattern with a conductive paste on a firstthermoplastic resin sheet;

mounting a semiconductor device package manufactured by thesemiconductor device package manufacturing method defined in any one ofthe first through eighth aspects and an electronic component atspecified positions of the circuit pattern of the first thermoplasticresin sheet; and

forming a thermoplastic resin portion for covering the semiconductorpackage and the electronic component by aligning in position a secondthermoplastic resin sheet with the first thermoplastic resin sheet onwhich the semiconductor device package and the electronic component aremounted and melting the second thermoplastic resin sheet through hotpressing.

According to an 11th aspect of the present invention, there is providedan electronic component module manufacturing method as defined in the10th aspect, wherein when the thermoplastic resin portion is formed, asurface of the semiconductor device on which the bump is formed exceptfor the end surface of the bump of the semiconductor device by meltingthe thermoplastic resin sheet.

According to a 12th aspect of the present invention, there is provided amethod for manufacturing a noncontact IC card having an antenna coil forexecuting transmission and reception between an IC chip and outside, themethod comprising:

printing a circuit pattern capable of being electrically connected to anIC electrode portion of the IC chip or a circuit pattern to beelectrically connected to the IC electrode portion including a coilpattern that constitutes the antenna coil on a thermoplastic resin basematerial with a conductive paste;

arranging a semiconductor device package on the circuit pattern in amanner that the IC electrode portion of the IC chip of the semiconductordevice package that has the IC chip and is manufactured by thesemiconductor device package manufacturing method defined in any one ofthe first through ninth aspects is connected to the circuit pattern;

hardening the conductive paste;

forming a thermoplastic resin portion for covering the semiconductordevice package by aligning in position a thermoplastic resin sheet on asemiconductor device package mounting surface side of the thermoplasticresin base material obtained after the hardening of the conductive pasteand melting the thermoplastic resin sheet through hot pressing; and

cutting the thermoplastic resin portion after the hot pressing, formingthe card.

According to a 13th aspect of the present invention, there is provided asemiconductor device package manufactured by the semiconductor devicepackage manufacturing method defined in any one of the first througheighth aspects.

According to a 14th aspect of the present invention, there is provided asemiconductor device package manufactured by the semiconductor devicepackage manufacturing method defined in the ninth aspect.

According to a 15th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing method forperforming mounting of a semiconductor device on a circuit pattern,which is electrically connected to the semiconductor device while beingbrought in contact with a bump of the semiconductor device a nd isformed of a conductive paste on a pattern forming surface of a basematerial, the method comprising:

inserting the semiconductor device into the base material with the bumpof the semiconductor device put in an exposed state proximately to thepattern forming surface; and

forming a contact area increasing portion for increasing a contact areaof the circuit pattern with the bump on the bump exposed on the patternforming surface.

According to a 16th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing method as definedin the 15th aspect, wherein

the contact area increasing portion is formed of an extensionportion-forming member brought in contact with the bump or the patternforming surface located in a vicinity of the bump when the contact areais increased, and

the extension portion-forming member is pressurized against the bump orthe pattern forming surface located in the vicinity of the bump.

According to a 17th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing method as definedin the 16th aspect, wherein, when the extension portion-forming memberhas a cylindrical shape, a projecting portion is formed as the contactarea increasing portion on the bump formed by a pressurizing operationfor performing pressurization with the extension portion-forming member.

According to an 18th aspect of the present invention, there is provideda semiconductor device-mounted component manufacturing method as definedin the 16th aspect, wherein, when the extension portion-forming memberhas a rugged portion at its tip, a rugged portion is formed as thecontact area increasing portion on the bump formed by a pressurizingoperation for performing pressurization with the extensionportion-forming member.

According to a 19th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing method as definedin the 16th aspect, wherein, when the extension portion-forming memberhas a cylindrical shape, a contact area increasing groove is formed inthe vicinity of the bump by pressurizing the pattern forming surface inthe vicinity of the bump by a pressurizing operation for performingpressurization with the extension portion-forming member, thus exposingthe bump from the base material.

According to a 20th aspect of the present invention, there is provided asemiconductor device-mounted finished-product manufacturing method forencapsulating a semiconductor device-mounted component manufactured bythe semiconductor device-mounted component manufacturing method definedin any one of the 15th through 19th aspects.

According to a 21st aspect of the present invention, there is provided asemiconductor device-mounted finished-product provided with asemiconductor device-mounted component manufactured by the semiconductordevice-mounted component manufacturing method defined in any one of the15th through 19th aspects.

According to a 22nd aspect of the present invention, there is provided asemiconductor device-mounted finished-product manufactured by thesemiconductor device-mounted finished-product manufacturing methoddefined in the 20th aspect.

According to a 23rd aspect of the present invention, there is provided asemiconductor device-mounted finished-product as defined in the 21staspect, wherein the semiconductor device-mounted finished-product is anoncontact IC card.

According to a 24th aspect of the present invention, there is provided asemiconductor device-mounted finished-product as defined in the 22ndaspect, wherein the semiconductor device-mounted finished-product is anoncontact IC card.

According to a 25th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing apparatus forperforming mounting of a semiconductor device on a circuit pattern,which is electrically connected to the semiconductor device while beingbrought in contact with a bump of the semiconductor device and is formedof a conductive paste on a pattern forming surface of a base material,the apparatus comprising:

a semiconductor device pressurizing device for inserting thesemiconductor device into the base material with the bump of thesemiconductor device put in an exposed state or an unexposed stateproximately to the pattern forming surface; and

a contact area increasing device for forming a contact area increasingportion for increasing a contact area of the circuit pattern with thebump on the bump exposed or located proximately to the pattern formingsurface.

According to a 26th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing apparatus asdefined in the 25th aspect, wherein

the contact area increasing device comprises:

an extension portion-forming member for forming the contact areaincreasing portion by coming in contact with the bump or in contact withthe pattern forming surface located in the vicinity of the bump; and

an extension portion-forming member-use pressurizing device forpressurizing the extension portion-forming member against the bump orthe pattern forming surface located in the vicinity of the bump.

According to a 27th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing apparatus asdefined in the 26th aspect, wherein

the extension portion-forming member has a cylindrical shape and forms aprojecting portion that serves as the contact area increasing portion onthe bump formed by a pressurizing operation for performingpressurization with the extension portion-forming member-usepressurizing device.

According to a 28th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing apparatus asdefined in the 26th aspect, wherein the extension portion-forming memberhas at its tip a rugged portion and forms a rugged portion as thecontact area increasing portion on the bump formed by a pressurizingoperation for performing pressurization with the extensionportion-forming member-use pressurizing device.

According to a 29th aspect of the present invention, there is provided asemiconductor device-mounted component manufacturing apparatus asdefined in the 26th aspect, wherein the extension portion-forming memberhas a cylindrical shape and forms a contact area increasing groove inthe vicinity of the bump by pressurizing the pattern forming surfacelocated in the vicinity of the bump by a pressurizing operation forperforming pressurization with the extension portion-forming member-usepressurizing device, thus exposing the bump from the base material.

According to a 30th aspect of the present invention, there is provided asemiconductor device-mounted finished-product manufacturing apparatuscomprising:

the semiconductor device-mounted component manufacturing apparatusdefined in any one of the 25th through 29th aspects; and

an encapsulating device for encapsulating the semiconductordevice-mounted component manufactured by the semiconductordevice-mounted component manufacturing apparatus.

According to a 31st aspect of the present invention, there is provided asemiconductor device-mounted finished-product comprising thesemiconductor device-mounted component manufactured by the semiconductordevice-mounted component manufacturing apparatus defined in any one ofthe 25th through 29th aspects.

According to a 32nd aspect of the present invention, there is provided asemiconductor device-mounted finished-product manufactured by thesemiconductor device-mounted finished-product manufacturing apparatusdefined in the 30th aspect.

According to a 33rd aspect of the present invention, there is provided asemiconductor device-mounted finished-product defined in the 31staspect, wherein the semiconductor device-mounted finished-product is anoncontact IC card.

According to a 34th aspect of the present invention, there is provided asemiconductor device-mounted finished-product defined in the 32ndaspect, wherein the semiconductor device-mounted finished-product is anoncontact IC card.

BRIEF DESCRIPTION OF DRAWINGS

These and other aspects and features of the present invention willbecome clear from the following description taken in conjunction withthe preferred embodiments thereof with reference to the accompanyingdrawings, in which:

FIG. 1A and FIG. 1B are partial sectional views of a semiconductordevice package manufactured by a semiconductor device packagemanufacturing method according to a first embodiment and a secondembodiment, respectively, of the present invention;

FIG. 2 is a process chart showing the semiconductor device packagemanufacturing method of the first embodiment of the present invention;

FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, and FIG. 3E are partial sectionalviews for explaining the semiconductor device package manufacturingmethod of the first embodiment of FIG. 2;

FIG. 4A and FIG. 4B are partial sectional views for explaining thesemiconductor device package manufacturing method of the firstembodiment of FIG. 2, continued from FIG. 3E;

FIG. 5A, FIG. 5B and FIG. 5C are partial sectional views for explainingthe external appearance of bumps on semiconductor device electrodes ofthe first embodiment;

FIG. 6 is a process chart showing the semiconductor device packagemanufacturing method of the second embodiment of the present invention;

FIG. 7 is a process chart showing a semiconductor device packagemanufacturing method according to a third embodiment of the presentinvention;

FIG. 8A, FIG. 8B and FIG. 8C are explanatory views for explaining thesemiconductor device package manufacturing method of the thirdembodiment of FIG. 7;

FIG. 9A, FIG. 9B and FIG. 9C are partial sectional views for explainingthe semiconductor device package manufacturing method of the thirdembodiment of FIG. 7, continued from FIG. 8C;

FIG. 10A and FIG. 10B are partial sectional views for explaining asemiconductor device package according to a fourth embodiment of thepresent invention;

FIG. 11 is a process chart showing the semiconductor device packagemanufacturing method of the fourth embodiment of FIG. 10A and FIG. 10B;

FIG. 12 is a partial sectional view for explaining a semiconductordevice package according to a fifth embodiment of the present invention;

FIG. 13 is a process chart showing the semiconductor device packagemanufacturing method of the fifth embodiment;

FIG. 14A, FIG. 14B, FIG. 14C and FIG. 14D are partial sectional viewsfor explaining an electronic component module manufacturing methodaccording to a sixth embodiment of the present invention;

FIG. 15 is a process chart showing the electronic component modulemanufacturing method of the sixth embodiment;

FIG. 16A, FIG. 16B, FIG. 16C and FIG. 16D are partial sectional viewsfor explaining a noncontact IC card manufacturing method according to aseventh embodiment of the present invention;

FIG. 17 is a process chart showing the noncontact IC card manufacturingmethod of the seventh embodiment;

FIG. 18 is a partial sectional view for explaining a conventionalsemiconductor device package;

FIG. 19 is a process chart showing the conventional semiconductor devicepackage manufacturing method;

FIG. 20A, FIG. 20B, FIG. 20C and FIG. 20D are partial sectional viewsfor explaining the conventional semiconductor device package;

FIG. 21 is a partial sectional view for explaining the conventionalsemiconductor device package;

FIG. 22 is a sectional view of a semiconductor component-mountedfinished-product according to an eighth embodiment of the presentinvention;

FIG. 23 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 201;

FIG. 24 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 202;

FIG. 25 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 203;

FIG. 26 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 204;

FIG. 27 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 205;

FIG. 28 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 206;

FIG. 29 is a view for explaining a manufacturing process of thesemiconductor component-mounted finished-product shown in FIG. 22,showing a state in step 207;

FIG. 30 is a view showing a state in which the electronic component ismounted on the circuit pattern in the semiconductor component-mountedcomponent provided for the semiconductor component-mountedfinished-product shown in FIG. 22;

FIG. 31 is a sectional view showing a state in which the semiconductorcomponent-mounted component shown in FIG. 30 is subjected to alaminating process;

FIG. 32 is a plan view of a semiconductor component-mounted componentprovided for a noncontact IC card in a case where the semiconductorcomponent-mounted finished-product shown in FIG. 22 is the noncontact ICcard;

FIG. 33 is a sectional view taken along the line I—I shown in FIG. 32;

FIG. 34 is a sectional view taken along the line I—I of the noncontactIC card shown in FIG. 32;

FIG. 35 is a plan view showing a state in which the noncontact IC cardof FIG. 32 is provided with a jumper;

FIG. 36 is a flowchart showing the manufacturing processes of thesemiconductor component-mounted finished-product shown in FIG. 22;

FIG. 37 is a sectional view of a modification example of the noncontactIC card shown in FIG. 32 provided with a jumper;

FIG. 38 is a sectional view of a modification example of thesemiconductor component-mounted finished-product shown in FIG. 28;

FIG. 39 is a view showing a modification example of an extensionportion-forming member shown in FIG. 27;

FIG. 40 is a view showing another modification example of the extensionportion-forming member shown in FIG. 27;

FIG. 41 is a perspective view showing the structure of a conventionalnoncontact IC card;

FIG. 42 is a flowchart showing the manufacturing processes of theconventional noncontact IC card;

FIG. 43 is a sectional view showing a manufacturing process of theconventional noncontact IC card;

FIG. 44 is a sectional view showing a manufacturing process of theconventional noncontact IC card;

FIG. 45 is a sectional view showing a manufacturing process of theconventional noncontact IC card;

FIG. 46 is a sectional view showing a manufacturing process of theconventional noncontact IC card;

FIG. 47 is a sectional view showing the structure of the conventionalnoncontact IC card; and

FIG. 48 is a sectional view showing a deficiency state of theconventional noncontact IC card.

DETAILED DESCRIPTION OF THE INVENTION

Before the description of the present invention proceeds, it is to benoted that like parts are designated by like reference numeralsthroughout the accompanying drawings.

Several embodiments of the present invention will be described belowwith reference to the accompanying drawings, for the understanding ofthe present invention. It is to be noted that the following embodimentsare each one materialized example of the present invention and do notlimit the technological scope of the present invention.

FIRST EMBODIMENT AND SECOND EMBODIMENT

FIG. 1A and FIG. 1B are partial sectional views showing the schematicconstructions of semiconductor device packages according to the firstembodiment and the second embodiment of the present invention.

As shown in FIG. 1A, the semiconductor device package of the firstembodiment is constructed of a semiconductor device 3 in which a bump 4is formed on each element electrode 5 by the wire bonding method and athermoplastic resin portion 7 that covers the periphery of thesemiconductor device 3. As shown in FIG. 1A, the end surface 9 of eachbump 4 is exposed on the surface of the thermoplastic resin portion 7,providing a structure for enabling electrical connection to the outside.In FIG. 1A, the reference numeral 6 denotes a passivation film forprotecting the active surface of the semiconductor device 3.

Although the end surfaces of the side portions of the semiconductordevice 3 are structured so as to be covered with the thermoplastic resinportion 7 as indicated by the encircled number 1 ({circle around (1)})in FIG. 1A, it is acceptable to adopt a structure in which the endsurfaces of the side portions of the semiconductor device 3 are exposedas indicated by the encircled number 2 ({circle around (2)}) in FIG. 1B.

The above difference is attributed to the difference in thesemiconductor device package manufacturing method described in detailbelow.

FIRST EMBODIMENT

FIG. 2 is a process chart showing the semiconductor device packagemanufacturing method of the first embodiment of the present invention.FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D and FIG. 3E are partial sectionalviews for explaining the semiconductor device package manufacturingmethod of the first embodiment of FIG. 2. FIG. 4A and FIG. 4B arepartial sectional views for explaining the semiconductor device packagemanufacturing method of the first embodiment of FIG. 2, continued fromFIG. 3E. FIG. 5A, FIG. 5B and FIG. 5C are partial sectional views forexplaining the external appearance of the bumps on the semiconductordevice electrode of the first embodiment.

In FIG. 3A, reference numeral 1 denotes a semiconductor wafer and 2denotes a dicing saw. In step S1 of FIG. 2, the semiconductor wafer 1 isdiced to be divided into each piece of the semiconductor device 3.

Next, in step S2, as shown in FIG. 3B, a bump 4 is formed on eachelement electrode 5 of the semiconductor device 3 divided into eachindividual piece by the wire bonding method using a metallic wire formedof Au, Cu, solder, or the like.

Next, in step S3, as shown in FIG. 3C, one or a plurality ofsemiconductor devices 3 on which the bumps 4 have been formed aremounted on a sheet 7 a formed of a thermoplastic resin of polyethyleneterephthalate, vinyl chloride, polycarbonate, acrylonitrile butadienestyrene, or the like. The thickness of the thermoplastic resin sheet 7 ais preferably basically not greater than a total thickness of thethickness of the semiconductor device 3 and the height of the bump 4.For example, when the thickness of the semiconductor device 3 is 0.18 mmand the height of the bump 4 is 0.04 mm, there is employed athermoplastic resin sheet 7 a of a thickness of 0.2 mm.

Next, in step S4, as shown in FIG. 3D, by placing the thermoplasticresin sheet 7 a on a hot pressing plate 8B arranged opposite to a hotpressing plate 8A, holding the thermoplastic resin sheet 7 a on whichthe semiconductor device 3 is mounted between the hot pressing plates 8Aand 8B, and pressurizing the hot pressing plate 8A against the hotpressing plate 8B relative to each other, hot pressing is carried out tomelt the thermoplastic resin sheet 7 a, with which the surface of thesemiconductor device 3 except for the upper surface is covered and theside surfaces of the bumps 4 of the semiconductor device 3 are covered,exposing only the end surfaces 9 of the bumps. The melted thermoplasticresin sheet 7 a is cooled to constitute the thermoplastic resin portion7. With regard to the hot pressing conditions, when, for example,polyethylene terephthalate is employed for the thermoplastic resin sheet7 a, the conditions include a pressure of 30 kg/cm² (about 30×10⁵ Pa), atemperature of 120° C., and a pressing time of one minute. It is to benoted that the temperature and the pressure are varied depending on thematerial of the thermoplastic resin sheet 7 a. FIG. 3E is a sectionalview showing a state after the hot pressing.

Next, in step S5, the thermoplastic resin portion 7 is cut in specifiedpositions A shown in FIG. 4A. A distance from the end surface of theside portion of the semiconductor device 3 to the cutting position A isnot particularly specified.

Through the aforementioned processes, a semiconductor device package ofthe first embodiment is completed in step S7 as shown in FIG. 4B. Thisis the semiconductor device package shown in FIG. 1A.

The bump 4 formed on the electrode 5 of the semiconductor device 3 maybe a bump 4 of the shape shown in FIG. 5A (generally called the ton-offbump) or a bump 4A of the shape shown in FIG. 5B (generally called thetwo-step projection bump). However, the two-step projection bump 4A thathas a small height variation dimension B is more desirable because thearea C of the end surface 9 of the bump 4 exposed from the surface ofthe thermoplastic resin portion 7 after the hot pressing is morestabilized as shown in FIG. 5C.

In this first embodiment, the semiconductor device package, which hasthe total thickness of those of the semiconductor device 3 and thethermoplastic resin portion 7 as shown in step S7 of FIG. 2, can beremarkably reduced in thickness, dissimilar to the semiconductor devicepackage shown in the prior art example of FIG. 21. Moreover, because ofthe absence of the conductive adhesive 16 and the encapsulant 21 shownin FIG. 21 and because of no time required for the hardening of theconductive adhesive and the encapsulant, the productivity can beremarkably improved.

SECOND EMBODIMENT

FIG. 6 is a process chart showing the semiconductor device packagemanufacturing method of the second embodiment of the present invention.The semiconductor device package manufacturing method of the secondembodiment differs from the first embodiment in that bumps 4 are formedin the state of the semiconductor wafer 1 in step S11 of FIG. 6 andthereafter dicing is performed in step S12 for the division into eachindividual piece of the semiconductor device 3. This second embodimentis similar to the steps S3, S4 and S5 of the first embodiment in thepoints of the mounting on the thermoplastic resin sheet 7 a in step S13,the hot pressing performed in step S14, and the cutting of thethermoplastic resin portion 7 in step S15, respectively.

Even in this second embodiment, the semiconductor device package, whichhas the total thickness of those of the semiconductor device 3 and thethermoplastic resin portion 7, can be remarkably reduced in thickness,dissimilar to the semiconductor device package shown in the prior artexample of FIG. 21. Moreover, because of the absence of the conductiveadhesive 16 and the encapsulant 21 shown in FIG. 21 and because of notime required for the hardening of the conductive adhesive and theencapsulant, the productivity can be remarkably improved.

THIRD EMBODIMENT

Next, FIG. 7 is a process chart showing the semiconductor device packagemanufacturing method of the third embodiment of the present invention.FIG. 8A, FIG. 8B and FIG. 8C are explanatory views for explaining thesemiconductor device package manufacturing method of the thirdembodiment of FIG. 7. FIG. 9A, FIG. 9B and FIG. 9C are partial sectionalviews for explaining the semiconductor device package manufacturingmethod of the third embodiment of FIG. 7, continued from FIG. 8C.

In step S21 of FIG. 7, as shown in FIG. 8A, a bump 4 is formed on eachelectrode element of a semiconductor wafer 1 by the wire bonding method.The reference numeral 61 denotes a capillary that is provided for a wirebonding device and holds a metallic wire formed of Au, Cu, solder, orthe like, while the reference numeral 60 denotes a horn that belongs tothe wire bonding device, holds the capillary 61 and applies a pressureand a supersonic wave.

Next, in step S22, as shown in FIG. 8B, a thermoplastic resin sheet 7 bformed of a thermoplastic resin of polyethylene terephthalate, vinylchloride, polycarbonate, acrylonitrile butadiene styrene, or the like isarranged oppositely to the semiconductor wafer 1 on which the bumps 4are formed. The thickness of the thermoplastic resin sheet 7 b ispreferably basically not greater than the height of the bump 4. Forexample, when the height of the bump 4 is 0.04 mm, there is employed athermoplastic resin sheet 7 b of a thickness of 0.03 mm.

Next, in step S23, as shown in FIG. 8C, by placing the semiconductorwafer 1 on a hot pressing plate 8D arranged opposite to a hot pressingplate 8C, holding the semiconductor wafer 1 and the thermoplastic resinsheet 7 b arranged opposite to the semiconductor wafer 1 between the hotpressing plates 8C and 8D, and pressurizing the hot pressing plate 8Cagainst the hot pressing plate 8D relatively to each other, the hotpressing is carried out to melt the thermoplastic resin sheet 7 b, withwhich the upper surface of the semiconductor wafer 1 is covered and theside surfaces of the bumps 4 of the semiconductor wafer 1 are covered,exposing only the end surfaces 9 of the bumps. The melted thermoplasticresin sheet 7 b is cooled to constitute the thermoplastic resin portion7. With regard to the hot pressing conditions, when, for example,polyethylene terephthalate is employed for the thermoplastic resin sheet7 b, the conditions include a pressure of 30 kg/cm² (about 30×10⁵ Pa), atemperature of 120° C., and a pressing time of one minute. It is to benoted that the temperature and the pressure are varied depending on thematerial of the thermoplastic resin sheet 7 b. FIG. 9A is a sectionalview showing a state after the hot pressing.

Next, in step S24, as shown in FIG. 9B, the semiconductor wafer 1 withthe thermoplastic resin portion 7 formed through the hot pressing of thethermoplastic resin sheet 7 b is diced by the dicing saw 2 and cut intoeach individual piece of the semiconductor device 3.

FIG. 9C is a sectional view showing the semiconductor device package 3obtained after the division, and the semiconductor device 3 shown inFIG. 1B come to have a structure of {circle around (2)} in which the endsurfaces of the side portions thereof are exposed.

Through the above-mentioned processes, the semiconductor device packageof the third embodiment is completed.

Even in this third embodiment, the semiconductor device package, whichhas the total thickness of those of the semiconductor device 3 and thethermoplastic resin portion 7, can be remarkably reduced in thickness,dissimilar to the semiconductor device package shown in the prior artexample of FIG. 12. Moreover, because of the absence of the conductiveadhesive 16 and the encapsulant 21 shown in FIG. 21 and because of notime required for the hardening of the conductive adhesive and theencapsulant, the productivity can be remarkably improved.

FOURTH EMBODIMENT

FIG. 10A and FIG. 10B are partial sectional views for explaining thesemiconductor device package of the fourth embodiment of the presentinvention. FIG. 11 is a process chart showing the semiconductor devicepackage manufacturing method of the fourth embodiment of FIG. 10A andFIG. 10B. In the semiconductor device package of the fourth embodiment,as shown in FIG. 10A and FIG. 10B, the semiconductor device package ofthe first embodiment or/and the second embodiment shown in FIG. 1A andFIG. 1B has a structure in which a circuit pattern is formed of aconductive paste 12 on a thermoplastic resin portion 7 on which the endsurface 9 of each bump 4 is exposed, a metallic particle 11 is mountedon the conductive paste 12 is covered with a thermoplastic resin portion7 c, and the end surface of the metallic particle 11 is exposed on thesurface of the thermoplastic resin portion 7 c.

First of all, in step S31 of FIG. 11, a circuit pattern is formed of aconductive paste 12 on each electrode end surface side (i.e., the endsurface side of each bump 4) of the semiconductor device package shownin FIG. 1A or FIG. 1B manufactured in accordance with the firstembodiment or the second embodiment. The conductive paste 12 may beeither the thermosetting type or the thermoplastic type.

Next, in step S32, the metallic particles 11 are mounted in specifiedpositions of the circuit pattern formed in the step S31, and theconductive paste 12 for forming the circuit pattern is thermallyhardened in step S33.

The metallic particle 11 is provided by Au, Cu, Ni, or the like capableof achieving electric conduction and is allowed to have a spherical oranother shape in terms of shape. Its size is determined depending on thethickness of the thermoplastic resin sheet located on the covered sidein step S34 and dimensioned so that the end surfaces of the metallicparticles 11 are exposed from the thermoplastic resin sheet after thehot pressing in step S35 and able to achieve electric conduction to theoutside. For example, when a thermoplastic resin film of a thickness of100 μm is employed, a metallic particle 11 having a diameter of about0.5 mm is employed.

Moreover, the thermosetting conditions of the conductive paste 12 havethe standard values of 140° C. and about 10 minutes.

In step S34, the thermoplastic resin sheet is arranged oppositely to thesurface on which the circuit pattern of the semiconductor device packageis formed.

Next, in step S35, by performing hot pressing and cutting thethermoplastic resin sheet as the occasion demands, the semiconductordevice package shown in FIG. 10A is completed. In this case, thethermoplastic resin portion 7 c is constructed of the thermoplasticresin sheet.

By stopping the process flow after the step S35 without proceeding tostep S36, the semiconductor device package shown in FIG. 10A iscompleted. Further, as the occasion demands, after step S35, byperforming the five processes of a circuit pattern printing process ofstep S36 (process similar to step S31), a metallic particle mountingprocess of step S37 (process similar to step S32), a paste hardeningprocess of step S38 (process similar to step S33), a mounting processonto a sheet of step S39 (process similar to step S34), and a hotpressing process of step S40 (process similar to step S35), a circuitpattern is formed of the conductive paste 12 on the end surface sides ofthe metallic particles 11 exposed from the thermoplastic resin portion 7c of the semiconductor package of FIG. 10A, and the metallic particles11 are mounted in the specified positions of the circuit pattern. Theconductive paste 12 is hardened, and after mounting a thermoplasticresin sheet, hot pressing is performed to form another thermoplasticresin portion 7 d on the thermoplastic resin portion 7 c. With thisarrangement, the multi-layered semiconductor package shown in FIG. 10Bcan be produced. By repeating the five processes of step S36 through S40in required times, a thermoplastic resin portion including the circuitpattern and the metallic particles 11 can further be formed in thenumber required on the thermoplastic resin portion 7 d.

Even in this fourth embodiment, the semiconductor device package, whichhas the total thickness of those of the semiconductor device 3 and thethermoplastic resin portion, can be remarkably reduced in thickness,dissimilar to the semiconductor device package shown in the prior artexample of FIG. 21. Moreover, because of the absence of the conductiveadhesive 16 and the encapsulant 21 shown in FIG. 21 and because of notime required for the hardening of the conductive adhesive and theencapsulant, the productivity can be remarkably improved. Furthermore, amulti-layered high-density semiconductor package can be supplied at lowcost.

FIFTH EMBODIMENT

FIG. 12 is a partial sectional view for explaining the semiconductordevice package of the fifth embodiment of the present invention. FIG. 13is a process chart showing the semiconductor device packagemanufacturing method of the fifth embodiment.

As shown in FIG. 12, according to the semiconductor device packagemanufacturing method of the fifth embodiment, the semiconductor devicepackage described in connection with the third embodiment has astructure in which a circuit pattern is formed of a conductive paste 12on a thermoplastic resin portion 7 where the end surface 9 of each bump4 is exposed, metallic particles 11 mounted on the circuit pattern arecovered with a thermoplastic resin portion 7 c, and the end surfaces ofeach metallic particles 11 are exposed on the surface of thethermoplastic resin portion 7 c.

Step S51 through step S53 of FIG. 13 are similar to the step S21 throughstep S23 of FIG. 7 of the third embodiment, i.e., the processes offorming the bumps 4 on the semiconductor wafer 1, then making thethermoplastic resin sheet 7 oppose to the wafer, and performing the hotpressing.

Subsequently, in step S54, a circuit pattern is formed of the conductivepaste 12 on the electrode end surface side, i.e., the bump end surfaceside of the semiconductor wafer 1 against which the thermoplastic resinsheet 7 is hot-pressed. The conductive paste 12 may be either thethermosetting type or the thermoplastic type.

Next, in step S55, the metallic particles 11 are mounted in thespecified positions of the circuit pattern, and the conductive paste 12that forms the circuit pattern is thermally hardened in step S56.

The metallic particle 11 is provided by Au, Cu, Ni, or the like capableof achieving electric conduction and is allowed to have a spherical oranother shape. Its size is determined depending on the thickness of anew thermoplastic resin sheet other than the thermoplastic resin sheet 7located on the covered side and dimensioned so that the end surfaces ofthe metallic particles 11 are exposed from the thermoplastic resin sheetafter the hot pressing and able to achieve electric conduction to theoutside. For example, when a thermoplastic resin sheet of a thickness of100 μm is employed, a metallic particle 11 having a diameter of about0.5 mm is employed.

Moreover, the thermosetting conditions of the conductive paste 12 havethe standard values of 140° C. and about 10 minutes.

Next, in step S57, by using hot pressing plates similar to the hotpressing plates 8C and 8D shown in FIG. 8C, placing the semiconductorwafer 1 on the other hot pressing plate opposite to one hot pressingplate, arranging the thermoplastic resin sheet oppositely to the surfacewhich belongs to the semiconductor wafer 1 and on which the circuitpattern is formed, holding the sheet between the pair of hot pressingplates, and pressurizing one hot pressing plate against the other hotpressing plate relatively to each other, the hot pressing is carried outin step S58 to melt the thermoplastic resin sheet, with which the uppersurface of the semiconductor wafer 1 is covered and the side surface ofeach metallic particle 11 of the semiconductor wafer 1 is covered,exposing only the end surfaces of the particles. The meltedthermoplastic resin sheet is cooled to constitute a thermoplastic resinportion 7 c. As a result, the thermoplastic resin portion 7 c thatincludes the circuit pattern and the metallic particles 11 is formed onthe thermoplastic resin portion 7. By further repeating step S54 throughstep S58, a thermoplastic resin portion 7 d that includes the circuitpattern and the metallic particles can be formed on the thermoplasticresin portion 7 c as shown in FIG. 12, allowing the multi-layerformation to be easily performed. As described above, by repeating stepS54 through step S58 in required times, the required number ofthermoplastic resin portions that include the circuit patterns and themetallic particles can be formed on the previously formed thermoplasticresin portion.

Finally, in step S59, by dicing the semiconductor wafer 1 against whichthe thermoplastic resin sheet is thermally pressed, the semiconductordevice package shown in FIG. 12 is completed.

Even in this fifth embodiment, the semiconductor device package, whichhas the total thickness of those of the semiconductor device and thethermoplastic resin portion, can be remarkably reduced in thickness,dissimilar to the semiconductor device package shown in the prior artexample of FIG. 21. Moreover, because of the absence of the conductiveadhesive 16 and the encapsulant 21 shown in FIG. 21 and because of notime required for the hardening of the conductive adhesive and theencapsulant, the productivity can be remarkably improved. Furthermore,the multi-layered high-density semiconductor package can be supplied atlow cost.

SIXTH EMBODIMENT

FIG. 14A, FIG. 14B, FIG. 14C and FIG. 14D are partial sectional viewsfor explaining the electronic component module manufacturing method ofthe sixth embodiment of the present invention. FIG. 15 is a processchart showing the electronic component module manufacturing method ofthe sixth embodiment.

The electronic component module manufacturing method of the sixthembodiment is related to electronic component modules that employ thesemiconductor device packages described in connection with the firstembodiment through the fifth embodiment.

As shown in FIG. 14A, in step S61 of FIG. 15, the reference numeral 13denotes a film substrate formed of a thermoplastic resin of polyethyleneterephthalate, vinyl chloride, polycarbonate, acrylonitrile butadienestyrene, or the like. A circuit pattern is formed of a thermosetting orthermoplastic type conductive paste 12 on the film substrate 13.

Next, as shown in FIG. 14B, in step S62, a semiconductor package 14 andan electronic component 15 such as a passive component of a resistor,capacitor, or the like are mounted in specified positions of the circuitpattern, and thereafter, the conductive paste 12 is thermally hardened.

Next, as shown in FIG. 14C, in step S63, a film substrate 13 is placedon a hot pressing plate 8F opposite to a hot pressing plate 8E, and athermoplastic resin sheet 13A is arranged as a cover sheet on thesemiconductor package 14 and the electronic component 15 oppositely tothe side on which the circuit board of the film substrate 13 is formedand held between the hot pressing plates 8E and 8F. The thickness of thethermoplastic resin sheet 13A is preferably not smaller than eitherthicker one of the semiconductor device package 14 or the electroniccomponent 15. Subsequently, in step S64, hot pressing is carried out tomelt the thermoplastic resin sheet 13A by pressurizing the hot pressingplate 8E against the hot pressing plate 8F relatively to each other, sothat at least the upper surfaces and the side surfaces of thesemiconductor package 14 and the electronic component 15 are coveredwith the sheet. The melted thermoplastic resin sheet 13A is cooled toconstitute a thermoplastic resin portion 13B. As a result, theelectronic component module shown in FIG. 14D is completed.

According to this sixth embodiment, the electronic component module,which has a thickness almost equal to the total thickness of those ofthe semiconductor device package 14 and the electronic component 15 andthe thermoplastic resin portion, can be reduced in thickness, whichcannot be achieved by electronic component module of the prior artexample. Moreover, since the thermoplastic resin portion secures thereliability of the semiconductor device and the electronic component,there is required neither encapsulant nor a time for the hardening ofthe encapsulant, dissimilar to the conventional case, and this allowsthe productivity to be remarkably improved. Furthermore, the lowmaterial cost enables the supply of an inexpensive electronic componentmodule.

SEVENTH EMBODIMENT

FIG. 16A, FIG. 16B, FIG. 16C and FIG. 16D are partial sectional viewsfor explaining the noncontact IC card manufacturing method of theseventh embodiment of the present invention. FIG. 17 is a process chartshowing the noncontact IC card manufacturing method of the seventhembodiment.

The seventh embodiment is an example of application to a noncontact ICcard constructed of a semiconductor device that has a noncontact ICcard-use IC chip and an antenna coil that executes transmission andreception to and from the outside.

As shown in FIG. 16A, in step S71 of FIG. 17, the reference numeral 23denotes a film substrate as one example of a thermoplastic resin basematerial formed of a thermoplastic resin of polyethylene terephthalate,vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, or thelike. On the film substrate 23, a circuit pattern is formed of athermosetting or thermoplastic type conductive paste 22, and a coil 26is formed for executing data transmission and reception to and from theoutside.

In step S72, as shown in FIG. 16B, a semiconductor package 14 that hasan IC chip for use in a noncontact IC card is mounted in a specifiedposition of the circuit pattern, and thereafter, the conductive paste 22is thermally hardened in step S73.

Next, in step S74, as shown in FIG. 16C, the film substrate 23 is placedon a hot pressing plate 8H arranged opposite to a hot pressing plate 8G,and a thermoplastic resin sheet 23A is arranged as a cover sheet on thesemiconductor package 14 oppositely to the side of the film substrate 23on which the circuit board is formed, and the film substrate 23 and thesheet 23A is held between the hot pressing plates 8G and 8H. Thethickness of the thermoplastic resin sheet 23A is preferably not smallerthan the thickness of the semiconductor device package 14 and is able tobe arbitrarily selected according to the required card thickness. Forexample, in the case of a 0.76-mm thick card conforming to JIS (JapaneseIndustrial Standard) standard, the thickness of the film substrate 23 isset to 0.2 mm, and the thickness of the thermoplastic resin sheets 23Ais set to 0.5 mm. Subsequently, in step S75, by pressurizing the hotpressing plate 8G against the hot pressing plate 8H relatively to eachother, hot pressing is carried out to melt the thermoplastic resin sheet23A, then completely covering the semiconductor device package 14 andthe coil 26 and the like located on the side where the circuit board ofthe film substrate 23 is formed. The melted thermoplastic resin sheet23A is cooled to constitute a thermoplastic resin portion 23B. Next, instep S76, by cutting the sheet into a card size by punching or the like,the noncontact IC card of the sectional structure shown in FIG. 16D iscompleted.

According to this seventh embodiment, the casing of the noncontact ICcard concurrently serves as the substrate, and therefore, a thin ICcard, which has not conventionally existed, can be formed. Theconventional structure, in which the semiconductor device has beenplaced on a glass epoxy substrate or a ceramic substrate and held in thecard casing, has been hard to reduce in thickness.

Moreover, since the semiconductor device package can be directly mountedonto the circuit pattern paste formed of the conductive paste prior tothe drying of the paste, the productivity is remarkably improved.Conventionally, the process has been complicated and the productivityhas been low since the process has included the steps of drying thepaste, thereafter mounting the semiconductor device via an anisotropicconductive resin sheet or anisotropic conductive particles, and thenperforming thermocompression bonding.

Furthermore, by virtue of the needlessness of the material ofencapsulant, anisotropic conductive resin sheet or anisotropicconductive particles, a remarkable cost reduction can be achieved. Asdescribed above, according to the seventh embodiment, the remarkableimprovement of the productivity, cost reduction, and thickness reductioncan be achieved in manufacturing the noncontact IC card.

It is to be noted that the present invention is not limited to theaforementioned embodiments and is able to be put into practice in avariety of forms.

As described above, according to the present invention, a thin typesemiconductor device package, which has conventionally not existed, canbe provided at low cost with high productivity.

Moreover, by employing the semiconductor device package, the electroniccomponent module and the noncontact IC card can be provided at low costwith high productivity.

That is, according to one embodiment of the present invention, there areprovided the steps of forming bumps on the element electrodes of asemiconductor device by the wire bonding method,

aligning in position a thermoplastic resin sheet with the semiconductordevice,

forming a thermoplastic resin portion that covers the portion of thesemiconductor device except for the end surfaces of the bumps by meltingthe thermoplastic resin sheet through the hot pressing of thethermoplastic resin sheet and the semiconductor device, and

cutting the thermoplastic resin portion after the hot pressing.Therefore, the semiconductor device package, which only has the totalthickness of those of the semiconductor device and the thermoplasticresin portion, can be remarkably reduced in thickness, dissimilar to thesemiconductor device package shown in the prior art example of FIG. 21.Moreover, because of the absence of the conductive adhesive and theencapsulant shown in FIG. 21 and because of no time required for thehardening of the conductive adhesive and the encapsulant, theproductivity can be remarkably improved.

Moreover, according to the electronic component module manufacturingmethod of the present invention, there are provided the steps ofprinting a circuit pattern on a first thermoplastic resin sheet by usinga conductive paste,

mounting the semiconductor device package manufactured by thesemiconductor device package manufacturing method together with theelectronic component in the specified positions of the circuit patternof the first thermoplastic resin sheet,

aligning in position a second thermoplastic resin sheet with the firstthermoplastic resin sheet on which the semiconductor device package andthe electronic component are mounted, and melting the secondthermoplastic resin sheet through hot pressing, thus forming athermoplastic resin portion that covers the semiconductor package andthe electronic component. Therefore, the electronic component module,which has a thickness almost equal to the total thickness of those ofthe semiconductor device package and the electronic component, can bereduced in thickness, which cannot be achieved by the electroniccomponent module of the prior art example. Moreover, since thethermoplastic resin portion secures the reliability of the semiconductordevice and the electronic component, there is required neitherencapsulant nor a time for the hardening of the encapsulant, and thisallows the productivity to be remarkably improved. Furthermore, sincethe material cost is low, an inexpensive electronic component module canbe supplied.

Moreover, according to the noncontact IC card manufacturing method ofthe present invention, there is provided a noncontact IC card that hasan IC chip and an antenna coil for executing transmission and receptionto and from the outside, through the steps of

printing on a thermoplastic resin base material a circuit patterncapable of being electrically connected to the IC electrode portions ofthe IC chip by a conductive paste or a circuit pattern to beelectrically connected to the IC electrode portions that includes a coilpattern constituting the antenna coil,

arranging the semiconductor device package on the circuit pattern sothat the IC electrode portions of the IC chip of the semiconductordevice package that has the IC chip and is manufactured by thesemiconductor device package manufacturing method are connected to thecircuit pattern,

hardening the conductive paste,

forming a thermoplastic resin portion for covering the semiconductordevice package by positioning a thermoplastic resin sheet on the surfacewhich belongs to the thermoplastic resin base material obtained afterthe hardening of the conductive paste and on which the semiconductordevice package is mounted and by melting the thermoplastic resin sheetthrough hot pressing, and

cutting the thermoplastic resin portion after the hot pressing into acard. Therefore, since the casing of the noncontact IC card concurrentlyserves as a substrate, a thin type IC card, which has conventionally notexisted, can be formed. The conventional structure, in which thesemiconductor device has been placed on a glass epoxy substrate or aceramic substrate and held in the card casing, has been hard to reducein thickness. Moreover, since the semiconductor device package can bedirectly mounted onto the circuit pattern paste formed of the conductivepaste prior to the drying of the paste, the productivity is remarkablyimproved. Conventionally, the process has been complicated and theproductivity has been low since the process has included the steps ofdrying the paste, thereafter mounting the semiconductor device via ananisotropic conductive resin sheet or anisotropic conductive particles,and then performing thermocompression bonding. Furthermore, by virtue ofthe needlessness of the material of encapsulant, anisotropic conductiveresin sheet or anisotropic conductive particles, a remarkable costreduction can be achieved. As described above, according to the seventhembodiment, the remarkable improvement of the productivity, costreduction, and thickness reduction can be achieved in manufacturing thenoncontact IC card.

EIGHTH EMBODIMENT

Next, the eighth embodiment of the present invention is related to asemiconductor component-mounted component manufacturing method andmanufacturing apparatus for manufacturing a semiconductorcomponent-mounted component by mounting on a substrate an electroniccomponent such as an IC chip, used for a case of electrically connectingthe IC chip to connection pads provided for a circuit patternconstructed of a conductive paste as in the case of manufacturing, forexample, a noncontact IC card, a manufacturing method or a manufacturingapparatus for manufacturing a semiconductor component-mountedfinished-product that has a semiconductor component-mounted componentmanufactured by the above manufacturing method or manufacturingapparatus, and a semiconductor component-mounted finished-productmanufactured by the semiconductor component-mounted finished-productmanufacturing method or manufacturing apparatus.

Before explaining in detail the contents of the eighth embodiment of thepresent invention, the background thereof will be described first.

The conventional semiconductor component-mounted finished-productmanufacturing method will be described below with reference to FIG. 41through FIG. 48 taking a noncontact IC card as an example.

Conventionally, when manufacturing a noncontact IC card that hasbuilt-in coil and IC chip and executes data exchange with the outsidevia the coil, there have been used a method for using a winding coilmade of copper, a method for forming a coil by printing a conductivepaste such as silver paste, a method for forming the coil by etching ametal foil such as a copper foil, and the like as a method for formingthe coil. Among others, the method for forming the circuit pattern andthe coil by printing the conductive paste has used popularity.

FIG. 41 through FIG. 48 show a conventional noncontact IC card and amanufacturing method therefor.

As shown in FIG. 41, in the conventional noncontact IC card, a coilpattern 502 is formed of a conductive paste on a first base material 501a, and a connection pad 506 provided at the outer peripheral terminal503 a of this coil pattern 502 and a connection pad 506 provided at theinner peripheral terminal 503 b of the coil pattern 2 are electricallyconnected to the electrode portions of the IC chip 504.

As shown in FIG. 42, first in step (indicated by “S” in the figure) 301,the manufacturing process thereof has the step of printing a circuitpattern including the coil pattern 502 with a conductive paste on thesurface of the first base material 501 a. As the above-mentionedconductive paste, silver paste is appropriately used. The printing ofthe conductive paste is performed by screen printing, offset printing,gravure printing, or the like. For example, in the case of screenprinting, a conductive paste is printed on the first base material 501 avia a mask of 165 meshes/inch and an emulsion thickness of 10 μm, thusforming a circuit pattern of a conductor thickness of about 30 μm. Athermoplastic resin, which has a thickness of about 0.1 to 0.5 mm and ismade of polyethylene terephthalate, vinyl chloride, polycarbonate,acrylonitrile butadiene styrene, or the like, is used for the first basematerial 501 a and the second base materials 502 b described later.

In step S302, the conductive paste is hardened by heating the circuitpattern made of the aforementioned conductive paste formed on the firstbase material 501 a by the printing method at a temperature of 120° C.for ten minutes.

In step 303, as shown in FIG. 43, an anisotropic conductive sheet 509 isstuck to the connection pads 506 provided at the outer peripheralterminal 503 a and the inner peripheral terminal 503 b of the circuitpattern. The anisotropic conductive sheet is a resin sheet that containsmetallic particles and operates to electrically connect the metallicparticles with the connection pads 506 by being heated and pressurized.

In step 304, the anisotropic conductive sheet 509 is heated at atemperature of 100° C. for five seconds so as to be temporarilypressure-bonded to the connection pads 506.

In step S305, a semiconductor device 504 and components of a capacitorand the like are mounted on the temporarily pressure-bonded anisotropicconductive sheet 509. On the mounting surface of the semiconductordevice, bumps 510 are formed on electrode pads 507 on the semiconductordevice 504 as shown in FIG. 44, and the bumps 510 and the connectionpads 506 are electrically connected together via the anisotropicconductive sheet 509 as shown in FIG. 45. It is to be noted that thebump 510 is formed on the electrode pad 507 of the semiconductor device504 by the wire bonding method or the plating method; or concretely bythe plating method which uses solder, gold, silver, copper, or the like.

In step 306, the anisotropic conductive sheet is hardened by beingheated at a temperature of 200° C. for 30 seconds as shown in FIG. 46,regularly pressure-bonding the semiconductor device 504.

In the general semiconductor mounting employing a glass epoxy substrateor a ceramic substrate for the first base material 501 a, the mountingof the semiconductor device is completed by this step 306.

Then, in step S307, by sticking the second base material 501 b to thefirst base material 501 a to perform a laminating process, an IC card inwhich the connection pads 506 and the bumps 510 are electricallyconnected together via the anisotropic conductive paste 509 is obtainedas shown in FIG. 47. In FIG. 47, the reference numeral 505 denotes acapacitor connected parallel to the coil pattern 502.

However, the aforementioned conventional semiconductor component-mountedfinished-product manufacturing method and the construction of thenoncontact IC card that serves as a semiconductor component-mountedfinished-product manufactured by the manufacturing method have had thefollowing issues.

In general, an inexpensive thermoplastic resin such as polyethyleneterephthalate and vinyl chloride is used for the first base material 501a and the second base material 501 b. On the other hand, theconventional manufacturing process, which has a high temperature of notlower than 200° C. in regularly pressure-bonding the semiconductordevice 504 via the anisotropic conductive sheet 509 in step S306, hasthe issue that the first base material 501 a and the second basematerial 501 b inferior in terms of heat resistance easily deteriorate.

Moreover, in order to fix the components of the semiconductor device 504and so on to the first base material 501 a with the anisotropicconductive sheet 509, there are needed temporary pressure bonding andregular pressure bonding of the anisotropic conductive sheet 509 to thefirst base material 501 a. Accordingly, there is an issue that theprocesses are increased in number and the productivity becomes low,leading to high cost.

The same thing can be said for the case of anisotropic conductiveparticles used in place of the anisotropic conductive sheet 509.

Moreover, the semiconductor device 504 is heated and pressurized whenperforming the laminating process in the step 307. Therefore, as shownin FIG. 48, the semiconductor device 504 sinks in the first basematerial 501 a, and the circuit pattern 506 provided by the conductivepaste is disadvantageously deformed in a curve. As a result, there ishigh possibility of circuit pattern disconnection, and a deficiency ofoperation trouble occurs.

The eighth embodiment of the present invention is intended to solve theabove-mentioned issues and has the object of providing a manufacturingmethod and apparatus of a semiconductor component-mounted component, amanufacturing method and manufacturing apparatus of a semiconductorcomponent-mounted finished-product, and a semiconductorcomponent-mounted finished-product, which have high-quality,high-productivity, and low cost.

The manufacturing method and manufacturing apparatus of thesemiconductor component-mounted component, the manufacturing method andmanufacturing apparatus of the semiconductor component-mountedfinished-product, and the semiconductor component-mountedfinished-product of the eighth embodiment of the present invention willbe described below with reference to the drawings. In this case, themanufacturing method and manufacturing apparatus of the semiconductorcomponent-mounted finished-product is the manufacturing method andapparatus for manufacturing a semiconductor component-mountedfinished-product that has a semiconductor component-mounted componentmanufactured by the manufacturing method and manufacturing apparatus ofthe semiconductor component-mounted component, while the semiconductorcomponent-mounted finished-product has the semiconductorcomponent-mounted component manufactured by the manufacturing method andmanufacturing apparatus of the semiconductor component-mounted componentand is manufactured by the manufacturing method and manufacturingapparatus of the semiconductor component-mounted finished-product. It isto be noted that the same components are denoted by the same referencenumerals in each figure.

A first thermoplastic resin base material 422 is taken as one examplethat fulfills the function of the aforementioned “base material” in thepresent eighth embodiment, and a bump 413 is taken as one example thatfulfills the function of a “circuit connection portion” in the presenteighth embodiment. Furthermore, a projecting portion 418, a ruggedportion 1131, and an exposed surface 1132 are taken as one example thatfulfills the function of a “contact area increasing portion” in thepresent eighth embodiment. Extension portion-forming members 450, 455and 457, a heating device 453, and an extension portion-formingmember-use pressurizing device 454 are taken as one example thatfulfills the function of a “contact area increasing device” in thepresent eighth embodiment. Moreover, although a noncontact IC card istaken as one example that fulfills the function of the “semiconductorcomponent-mounted finished-product” in the present eighth embodiment,the present invention is, of course, not limited to this.

FIG. 22 shows a noncontact IC card 401 that serves as one example of thesemiconductor component-mounted finished-product provided with thesemiconductor component-mounted component manufactured by themanufacturing method and manufacturing apparatus of the semiconductorcomponent-mounted component of the present eighth embodiment. In thenoncontact IC card 401, a semiconductor device 414 is preparatorilyembedded in the first thermoplastic resin base material 422, forming theprojecting portions 418 on member forming surfaces 415 that belong tothe bumps 413 and are exposed to a pattern forming surface 423 of thefirst thermoplastic resin base material 422. Then, a circuit pattern 416formed of a conductive paste and the projecting portions 418 directlyobtain conduction without interposition of an anisotropic conductivepaste or the like, dissimilar to the prior art example. The referencenumerals 424 and 425 denote a second thermoplastic resin sheet basematerial and a third thermoplastic resin sheet base material forperforming laminating process to protect a semiconductorcomponent-mounted component 421 that has the semiconductor device 414and the circuit pattern 416 and are used for the laminating processcorresponding to the encapsulating operation of the semiconductorcomponent-mounted component 421 by the encapsulating devices 426 and427. The manufacturing procedure of the noncontact IC card 401 will bedescribed below with reference to FIG. 23 through FIG. 29 and FIG. 36.

In FIG. 23, the reference numeral 417 denotes the electrode of thesemiconductor devices 414 corresponding to a semiconductor component,while the reference numeral 412 denotes a passivation film forprotecting the active surface of the semiconductor device 414.

In step (indicated by “S” in FIG. 36) 201 shown in FIG. 23 and FIG. 36,the bumps 413 are formed on electrodes 417 of the semiconductor device414 by the wire bonding method which uses a metallic wire made of Au,Cu, solder, or the like.

Next, in step S202 shown in FIG. 24 and FIG. 36, one or a plurality ofsemiconductor devices 414 on which the bumps 413 are formed are mountedon a sheet-shaped first thermoplastic resin base material 422 formed ofa thermoplastic resin of polyethylene terephthalate, vinyl chloride,polycarbonate, acrylonitrile butadiene styrene, or the like, which hasan electrical insulating property. In this case of the eighthembodiment, the thickness of the first thermoplastic resin base material422 is preferably basically greater than the thickness of thesemiconductor device 414 and not greater than the total thickness of thethickness of the semiconductor device 414 and the height of the bump 413for the reason that at least the member forming surfaces 415 of thebumps 413 are required to be exposed from the first thermoplastic resinbase material 422, as described later. For example, when thesemiconductor device 414 has a thickness of 0.18 mm and the bump 413 hasa height of 0.04 mm, the first thermoplastic resin base material 422preferably has a thickness of 0.2 mm.

Next, in step 203 shown in FIG. 25 and FIG. 36, the first thermoplasticresin base material 422 on which the semiconductor device 414 providedwith the bumps 413 is mounted is held between hot pressing plates 471and 472, and the semiconductor device 414 provided with the bumps 413and the first thermoplastic resin base material 422 are pressurizedrelative to each other by a semiconductor part pressurizing device 473with heat applied to them, inserting the semiconductor device 414 intothe first thermoplastic resin base material 422. When a firstthermoplastic resin base material made of, for example, polyethyleneterephthalate is employed, the hot pressing conditions include apressure of 30 105 Pa, a temperature of 120 C, and a pressing time ofone minute. The temperature and the pressure are varied according to thematerial of the first thermoplastic resin base material 422.

FIG. 26 corresponding to step 204 is a sectional view showing the stateof the semiconductor device 414 and the first thermoplastic resin basematerial 422 obtained after the pressing. By the operation of insertingthe semiconductor device 414 into the first thermoplastic resin basematerial 422, in the present eighth embodiment, as shown in FIG. 26, thesemiconductor device 414 and the bumps 413 are embedded in the firstthermoplastic resin base material in a state in which the end surfacesof the bumps 413, i.e., the member forming surfaces 415 that aresurfaces on which the bumps 413 are brought in contact with the hotpressing plate 471 is exposed to the pattern forming surface 423 of thefirst thermoplastic resin base material 422 by the aforementionedpressing.

At this time, in the present eighth embodiment, for decreasing itsthickness, it is constructed so that a back surface 414 a opposite fromthe active surface of the semiconductor device 414 and a back surface422 a of the first thermoplastic resin base material 422 opposite fromthe pattern forming surface are flush with each other as shown in thefigure. However, the present invention is not limited to this. That is,depending on the semiconductor component-mounted component to bemanufactured, it is acceptable to make the back surface 414 a of thesemiconductor device 414 project from, for example, the back surface 422a of the first thermoplastic resin base material 422 by adjusting thethickness of the first thermoplastic resin base material 422, thepressurization force of the hot pressing plates 471 and 472, or thelike.

It is to be noted that the member forming surface 415 is one example forfulfilling the function of the electric connection surface. Moreover, inthe present eighth embodiment, only the member forming surfaces 415 areexposed from the pattern forming surface 423 of the first thermoplasticresin base material 422. However, by devising the shape of, for example,the pressing plate 471, it is acceptable to expose not only the memberforming surfaces 415 but also parts or the wholes of the bumps 413 fromthe pattern forming surface 423. If this construction is adopted, theelectrical connection surface corresponds to the external surface of theportion exposed from the pattern forming surface 423. It is to be notedthat FIG. 38 shows a case in which the member forming surfaces 415 ofthe bumps 413 and their peripheral portions are exposed from the patternforming surface 423.

Next, in step 205 of FIG. 27 and FIG. 36, by pressurizing the memberforming surfaces 415 of the bumps 413 exposed on the pattern formingsurface 423 of the first thermoplastic resin base material 422 by anextension portion-forming member 450, the projecting portions 418 areformed integrally with the bumps 413 from the bumps 413 on the memberforming surfaces 415.

That is, for example, a cylindrical structure that internally has ahollow portion 451 is employed as the extension portion-forming member450. By heating the extension portion-forming member 450 to atemperature of, for example, 200 C by means of a heating device 453connected to the extension portion-forming member 450 and pressurizingthe tip 452 of the extension portion-forming members 450 against themember forming surfaces 415 with a load of 100 g per bump by means ofthe extension portion-forming member-use pressurizing device 454, themember forming surfaces 415 are deformed, and parts of the bumps 413enter a hollow portion 451. Therefore, after the pressurization,rectangularly projecting portions 418 projecting from the member formingsurfaces 415 are formed integrally with the bumps 413 on the memberforming surfaces 415.

By forming the projecting portions 418 as described above, a contactarea with the circuit pattern of a conductive paste described later isincreased further than when the circuit pattern is formed on the memberforming surfaces 415, and therefore, the reliability of bonding isincreased. Moreover, since the projecting portions 418 are formed by theextension portion-forming members 450, further cost reduction can beachieved than when bumps are further formed on, for example, the bumps413.

Moreover, the extension portion-forming member 450 is not limited inshape to the above-mentioned one and is also able to be provided by onewhose tip 456 is preferably sharpened or preferably provided with aplurality of rugged portions 1561 as, for example, a rod-shapedextension portion-forming member 455 as shown in FIG. 39. Bypressurizing the rugged portions 1561 of the extension portion-formingmember 455 as described above against the member forming surfaces 415 ofthe bumps 413, the rugged portions 1131 can be formed on the memberforming surfaces 415, and the contact area of the circuit pattern of theconductive paste described later with the bumps 413 can be increased,allowing the reliability of bonding to be increased.

Furthermore, as a modification example of the extension portion-formingmember 450, an extension portion-forming member 457 as shown in FIG. 40can also be employed. The extension portion-forming member 457 has ahollow portion 1571 that has a capacity for accommodating therein thebumps 413 and a tip portion 1573 that forms contact area increasinggrooves 1572 for increasing the contact area of the circuit pattern ofthe conductive paste described later with the bump 413, around the bumps413 when the tip portion of the extension portion-forming member 457 ispressurized against the pattern forming surface 423 of the firstthermoplastic resin base material 422. By pressurizing the extensionportion-forming member 457 described above against the pattern formingsurface 423 of the first thermoplastic resin base material 422, thecontact area increasing grooves 1572 are formed around the bumps 413,and an exposed surface 1132 exposed from the first thermoplastic resinbase material 422 is formed by the contact area increasing groove 1572.Therefore, the surface areas of the bumps 413 exposed from the patternforming surface 423 can be increased, and the contact area of thecircuit pattern of the conductive paste described later with the bumps413 can be increased, allowing the reliability of bonding to beincreased.

That is, the extension portion-forming member which forms the contactarea increasing portion for increasing the contact area of the circuitpattern of the conductive paste described later with the bumps 413 canbe used for the bumps 413. In this case, the projecting portion 418, therugged portion 1131 formed on the member forming surface 415 by therugged portion 1561, and the exposed surface 1132 exposed by the contactarea increasing groove 1572 correspondingly serve as the contact areaincreasing portion. Moreover, when the rugged portion 1131 is formed onthe bump, it is acceptable to form a rugged portion on the bump by a hotpressing plate provided with a rugged surface by utilizing the time ofembedding of the semiconductor device 414 in the hot pressing plate 471in step 203.

Next, in step 206 of FIG. 28 and FIG. 36, the circuit pattern 416electrically connected to the semiconductor device 414 is formed on thepattern forming surface 423 of the first thermoplastic resin basematerial 422 so as to make contact with the projecting portion 418 usinga conductive paste of Ag, Cu, or the like or preferably so as to embedthe projecting portion 418 as shown in the figure. Moreover, even in thecase of the aforementioned rugged portion 1131 and the exposed surface1132 of the bump 413, the circuit pattern 416 to be electricallyconnected to the semiconductor device 414 is formed on the patternforming surface 423 of the first thermoplastic resin base material 422so as to make contact with the rugged portion 1131 and the exposedsurface 1132 or preferably so as to embed them.

The formation of the circuit pattern 416 of the conductive paste isgenerally performed by the screen printing, offset printing, gravureprinting, or the like. For example, in the case of the screen printing,a conductive paste is printed via a mask of 165 meshes/inch and anemulsion thickness of 10 μm, thus forming a circuit pattern 416 of aconductor thickness of about 30 μm. It is to be noted that the circuitpattern 416 formed in the present eighth embodiment has the shape of anantenna coil for executing transmission and reception of information toand from the semiconductor device 414 in a wireless manner. The circuitpattern 416 is, of course, not limited to the aforementioned antennacoil shape and can be formed into a form corresponding to the functionsof the semiconductor component-mounted component as a manufacturedproduct.

The semiconductor device 414 is thus mounted on the circuit pattern 416.Moreover, the constituent part in the mounted state shown in FIG. 28 isserved as a semiconductor component-mounted component 421.

Next, in step S207 of FIG. 29 and FIG. 36, the semiconductorcomponent-mounted component 421 is sandwiched in the direction ofthickness thereof between the second thermoplastic resin sheet basematerial 424 and the third thermoplastic resin sheet base material 425,which have a sheet-like shape and electrical insulating properties andare made of polyethylene terephthalate, vinyl chloride, polycarbonate,acrylonitrile butadiene styrene, or the like and then laminated byencapsulating devices 426 and 427, thus performing the encapsulation ofthe semiconductor component 421. For example, when the firstthermoplastic resin base material made of polyethylene terephthalate isemployed, the laminating process conditions include a pressure of 30×10⁵Pa, a temperature of 120° C., a pressing time of one minute, and apressure retention time of one minute.

Through the aforementioned processes, the semiconductorcomponent-mounted component that serves as a module on which thesemiconductor device 414 is mounted as shown in FIG. 22, and thenoncontact IC card 401 corresponding to one example that fulfills thefunctions as a semiconductor component-mounted finished-product havingthe semiconductor component-mounted component as in the case of thepresent eighth embodiment is completed.

As described above, according to the present eighth embodiment, thesemiconductor device 414 is embedded in the first thermoplastic resinbase material 422, and thereafter, they are formed into a card.Therefore, the sinking of the semiconductor device 504 into the basematerial 501 a after the formation of a card, as in the prior artexample shown in FIG. 48, does not occur.

Therefore, the circuit pattern 416 is not disconnected, and this enablesthe manufacturing of high-quality semiconductor component-mountedcomponent and semiconductor component-mounted finished-product.

Furthermore, since there is no need for using a bonding material such asan anisotropic conductive sheet or anisotropic conductive particles,there is no process required for the processing of the anisotropicconductive sheet or the like, and this enables the provision ofhigh-productivity inexpensive semiconductor component-mounted componentand semiconductor component-mounted finished-product.

Moreover, it is also possible to form a semiconductor component-mountedcomponent 428 in which the circuit pattern 416 is formed on the patternforming surface 423 in step 206 and thereafter, as shown in FIG. 30, anelectronic component 429 that serves as a passive component of acapacitor, a resistor, or the like is mounted in a specified position ofthe circuit pattern. Then, as shown in FIG. 31, it is also possible tomanufacture the noncontact IC card 402 as shown in FIG. 31 bysandwiching the semiconductor component-mounted component 428 in thedirection of thickness thereof between the second thermoplastic resinbase material 424 and the third thermoplastic resin base material 425and then performing the laminating process.

Only the connection portions of the semiconductor device 414 and thecircuit pattern 416 are shown in FIG. 22 through FIG. 31 describedhereinabove. FIG. 32 shows a plan view showing the whole of thesemiconductor component-mounted component 421 shown in FIG. 28. FIG. 33shows a sectional view taken along the line I—I shown in FIG. 32. FIG.34 shows a sectional view taken along the line I—I of the noncontacttype IC card 401 obtained through the laminating process of the whole ofthe semiconductor component-mounted component 421 with the secondthermoplastic resin sheet base material 424 and the third thermoplasticresin sheet base material 425.

Moreover, as shown in FIG. 35, an insulating film 432 is provided forthe circuit pattern 416 in order to jumper-connect an outer peripheralterminal 430 of the circuit pattern 416 with the corresponding portion431 of the electrode 417 of the semiconductor device 414, andthereafter, the outer peripheral terminal 430 and the electrodecorresponding portion 431 are electrically connected with each other bythe printing of a conductive paste, a conductive foil 433, or the like.With this arrangement, a jumper as shown in the figure is completed. Itis to be noted that the formation of the insulating film 432 isperformed by the bonding of a polyester-based insulating foil or theprinting of an insulating coating.

Moreover, the jumper connection of the outer peripheral terminal 430 ofthe circuit pattern 416 with the corresponding portion 431 of theelectrode 417 of the semiconductor device 414 is not limited to theaforementioned method and is also able to be achieved by forming acircuit pattern 433 on the opposite side of the surface on which thecircuit pattern 416 is formed by printing a conductive paste via athrough hall 480 preparatorily provided in the first thermoplastic resinbase material 422 as shown in, for example, FIG. 37. The formation ofthe circuit pattern 433 may be performed before the embedding of thesemiconductor device 414 in the first thermoplastic resin base material422 or after the formation of the circuit pattern 416. The through hall480 can be filled with the conductive paste concurrently with theprinting of the circuit pattern 416 or the printing of the circuitpattern 433.

Moreover, although the pattern 433 formed on the opposite side of thesurface on which the circuit pattern 416 is formed is the coil jumper inthe present eighth embodiment, the present invention is not limited tothe construction. It is enabled to form the first thermoplastic resinbase material 422 into a double-sided substrate and form the same into aform corresponding to the functions of the semiconductorcomponent-mounted component that serves as a manufactured product.

According to the above description, although the semiconductorcomponent-mounted component 421 or the semiconductor component-mountedcomponent 428 are sandwiched between the two thermoplastic resin sheetbase materials 424 and 425 when manufacturing the noncontact IC card asone example that fulfills the functions of a semiconductorcomponent-mounted finished-product, the present invention is not limitedto the construction. For example, when the first thermoplastic resinbase material 422 is placed on a plate and encapsulated, it is proper toemploy only the third thermoplastic resin base material only 425, and itis proper to appropriately devise the use of the two thermoplastic resinbase materials 424 and 425 according to the type and functions of thesemiconductor component-mounted component to be manufactured.

Moreover, although the operation of inserting the semiconductor device414 provided with the bumps 413 into the first thermoplastic resin basematerial 422 and the operation of exposing the member forming surfaces415 of the bumps 413 on the pattern forming surface 423 are processed inthe same process in step S203 by executing the thickness adjustment ofthe first thermoplastic resin base material 422 and control of the hotpressing operation as described above in the eighth embodiment, thepresent invention is not limited to this. That is, it is acceptable toexpose, for example, the member forming surfaces 415 as projectingportions 418 by the extension portion-forming member 450 in the step 206for the achievement of electrical connection to the circuit pattern 416without exposing the member forming surfaces 415 on the pattern formingsurface 423.

As described in detail above, according to the manufacturing method andmanufacturing apparatus of the semiconductor component-mountedcomponent, the manufacturing method and manufacturing apparatus of thesemiconductor component-mounted finished-product of the presentinvention and the semiconductor component-mounted finished-product ofthe third aspect, the mounting is completed by forming the contact areaincreasing portion by the contact area increasing device on the circuitconnection portion of the inserted semiconductor component after theinsertion of the semiconductor component into the base material by thesemiconductor component pressurizing device, and then forming thecircuit pattern on the circuit connection portion that has the contactarea increasing portion. Therefore, because neither the anisotropicconductive sheet nor the anisotropic conductive particles is used duringmounting, remarkable improvement of the productivity and cost reductioncan be achieved in comparison with the conventional case. Moreover,since the circuit pattern is formed on the semiconductor componentinserted in the base material, the sinking of the semiconductorcomponent, which has occurred in the conventional case, can beprevented. As a result, the high-quality semiconductor component-mountedcomponent and semiconductor component-mounted finished-product free ofthe disconnection of the circuit pattern can stably be produced.

Although the present invention has been fully described in connectionwith the preferred embodiments thereof with reference to theaccompanying drawings, it is to be noted that various changes andmodifications are apparent to those skilled in the art. Such changes andmodifications are to be understood as included within the scope of thepresent invention as defined by the appended claims unless they departtherefrom.

1. A semiconductor device-mounted component manufacturing apparatus forperforming mounting of a semiconductor device on a circuit pattern,which is electrically connected to the semiconductor device while beingbrought in contact with a bump of the semiconductor device and is formedof a conductive paste on a pattern forming surface of a base material,the apparatus comprising: a semiconductor device pressurizing device forinserting the semiconductor device from one surface of the base materialand exposing an end surface of the bump at the other surface of the basematerial with the bump of the semiconductor device put in an exposedstate or an unexposed state proximately to the pattern forming surface;and a contact area increasing device for forming a contact areaincreasing portion for increasing a contact area of the circuit patternwith the bump that is exposed or located proximately to the patternforming surface, wherein the contact area increasing device comprises anextension portion-forming member for forming the contact area increasingportion by coming in contact with the bump or in contact with thepattern forming surface located in the vicinity of the bump.
 2. Asemiconductor device-mounted finished-product manufacturing apparatuscomprising: the semiconductor device-mounted component manufacturingapparatus claimed in claim 1; and an encapsulating device forencapsulating the semiconductor device mounted component manufactured bythe semiconductor device-mounted component manufacturing apparatus.
 3. Asemiconductor device-mounted component manufacturing apparatus asclaimed in claim 1, wherein the extension portion-forming membercomprises a hollow portion.
 4. A semiconductor device-mounted componentmanufacturing apparatus as claimed in claim 1, further comprising aheating device coupled to the extension portion-forming member.
 5. Asemiconductor device-mounted component manufacturing apparatus asclaimed in claim 1, wherein the contact area increasing device furthercomprises: an extension portion-forming member pressurizing device forpressuring the extension portion-forming member against the bump or thepattern forming surface located in the vicinity of the bump.
 6. Asemiconductor device-mounted component manufacturing apparatus asclaimed in claim 5, wherein the extension portion-forming member has acylindrical shape and forms a projecting portion that serves as thecontact area increasing portion on the bump formed by a pressurizingoperation for performing pressurization with the extensionportion-forming member pressurizing device.
 7. A semiconductordevice-mounted component manufacturing apparatus as claimed in claim 5,wherein the extension portion-forming member has at its tip a ruggedportion and forms a rugged portion as the contact area increasingportion on the bump formed by a pressurizing operation for performingpressurization with the extension portion forming member pressurizingdevice.
 8. A semiconductor device-mounted component manufacturingapparatus as claimed in claim 5, wherein the extension portion-formingmember has a cylindrical shape and forms a contact area increasinggroove in the vicinity of the bump by pressurizing the pattern formingsurface located in the vicinity of the bump by a pressurizing operationfor performing pressurization with the extension portion-forming memberpressurizing device, thus exposing the bump from the base material.
 9. Asemiconductor device-mounted finished-product manufacturing method forencapsulating a semiconductor device-mounted component manufactured by asemiconductor device-mounted component manufacturing method forperforming mounting of a semiconductor device on a circuit pattern,which is electrically connected to the semiconductor device while beingbrought into contact with a bump of the semiconductor device and isformed of a conductive paste on a pattern forming surface of a basematerial, said semiconductor device-mounted component manufacturingmethod comprising: inserting the semiconductor device into the basematerial with the bump of the semiconductor device put in an exposedstate proximately to the pattern forming surface by inserting thesemiconductor device into the base material from one surface of the basematerial and exposing an end surface of the bump at the opposite surfaceof the base material; and forming a contact area increasing portion forincreasing a contact area of the circuit pattern with the bump on thebump exposed on the pattern forming surface, wherein said forming thecontact area increasing portion comprises having an extensionportion-forming member come in contact with the end surface of the bump.10. A semiconductor device-mounted finished-product manufactured by asemiconductor device-mounted finished-product manufacturing method forencapsulating a semiconductor device-mounted component manufactured by asemiconductor device-mounted component manufacturing method forperforming mounting of a semiconductor device on a circuit pattern,which is electrically connected to the semiconductor device while beingbrought into contact with a bump of the semiconductor device and isformed of a conductive paste on a pattern forming surface of a basematerial, said semiconductor device-mounted component manufacturingmethod comprising: inserting the semiconductor device into the basematerial with the bump of the semiconductor device put in an exposedstate proximately to the pattern forming surface by inserting thesemiconductor device into the base material from one surface of the basematerial and exposing an end surface of the bump at the opposite surfaceof the base material; and forming a contact area increasing portion forincreasing a contact area of the circuit pattern with the bump on thebump exposed on the pattern forming surface, wherein said forming thecontact area increasing portion comprises having an extensionportion-forming member come in contact with the end surface of the bump.11. A semiconductor device-mounted finished-product as claimed in claim10, wherein the semiconductor device-mounted finished-product is anoncontact IC card.